Effect of electron beam irradiation on structural and optical properties of Cu-doped In2O3 films prepared by RF magnetron sputtering.
Krishnan, R. Reshmi
Pillai, V. P. Mahadevan
MetadataShow full item record
KRISHNAN, R.R., SANJEEV, G., PRABHU, R. and PILLAI, V.P.M. 2018. Effect of electron beam irradiation on structural and optical properties of Cu-doped In2O3 films prepared by RF magnetron sputtering. JOM: journal of the Minerals, Metals and Materials Society [online], 70(5), pages 739-746. Available from: https://doi.org/10.1007/s11837-018-2776-5
Undoped and Cu-doped In2O3 films were prepared by radiofrequency magnetron sputtering technique. The effects of Cu doping and high-energy electron beam irradiation on the structural and optical properties of as-prepared films were investigated using techniques such as x-ray diffraction, x-ray photoelectron spectroscopy (XPS), lateral scanning electron microscopic image analysis, energy-dispersive x-ray (EDX) spectroscopy, micro-Raman, and ultraviolet-visible (UV-vis) spectroscopy. Moderate doping of Cu in In2O3 enhanced the intensity of (222) peak, indicating alignment of crystalline grains along <111>. Electron beam irradiation promoted orientation of crystalline grains along <111> in undoped and moderately Cu-doped films. EDX spectroscopic and XPS analyses revealed incorporation of Cu2+ ions in the lattice. The transmittance of Cu-doped films decreased with e-beam irradiation. Systematic reduction of the bandgap energy with increase in Cu doping concentration was seen in unirradiated and electron-beam-irradiated films.